Loss compensation in Metamaterials through embedding of active transistor based negative differential resistance circuits

摘要

This paper presents an all-electronic approach for loss compensation inmetamaterials. This is achieved by embedding active-transistors based negativedifferential resistance (NDR) circuits in each unit cell of the metamateriallattice. NDR circuits provide tunable loss compensation over a broad frequencyrange limited only by the maximum operating frequency of transistors that isreaching terahertz values in newer semiconductor processes. Design, simulationand experimental results of metamaterials composed of split ring resonators(SRR) with and without loss compensation circuits are presented.